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EMB20P03G - P-Channel MOSFET

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Part number EMB20P03G
Manufacturer Excelliance MOS
File Size 182.95 KB
Description P-Channel MOSFET
Datasheet download datasheet EMB20P03G Datasheet
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EMB20P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐10A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±25 ‐10 ‐8 ‐40 ‐15 5 2.5 2.5 1 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.
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