EMBA0N10S Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMBA0N10S
- Manufacturer: Excelliance MOS
- Size: 186.28 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMBA0N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10F | MOSFET |
| EMBA0N10G | MOSFET |
| EMBA0A10G | MOSFET |