EMBA0N10G Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
EMBA0N10G Datasheet
| Part number | EMBA0N10G |
|---|---|
| Download | EMBA0N10G Datasheet (PDF) |
| File Size | 179.56 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
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