EMBA0N10S datasheet by Excelliance MOS.
| Part number | EMBA0N10S |
|---|---|
| Datasheet | EMBA0N10S-ExcellianceMOS.pdf |
| File Size | 186.28 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMBA0N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10F | MOSFET |
| EMBA0N10G | MOSFET |
| EMBA0A10G | MOSFET |
| EMBA1N10A | MOSFET |
| EMBA1N10Q | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A06HS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A10VS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
