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EMBB5N10Q Datasheet

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Excelliance MOS · EMBB5N10Q File Size : 184.90KB · 6 hits

Features and Benefits

RACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transcon.

EMBB5N10Q EMBB5N10Q EMBB5N10Q
TAGS
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMBB5N10P
EMBB5N10Q
EMBB5N15A
Stock and Price
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