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EMBB0N10J - MOSFET

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Part number EMBB0N10J
Manufacturer Excelliance MOS
File Size 172.43 KB
Description MOSFET
Datasheet download datasheet EMBB0N10J Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 220mΩ ID 1.4A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐ Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL EMBB0N10J LIMITS ±20 1.4 0.85 5.6 1.25 0.8 ‐55 to 150 UNIT V A W °C MAXIMUM 100 UNIT °C / W 2013/8/30 p.
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