EMBB0N10J Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
- Part: EMBB0N10J
- Manufacturer: Excelliance MOS
- Size: 172.43 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMBB0N10A | MOSFET |
| EMBB0N10V | MOSFET |
| EMBB0P10A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBB5B10G | MOSFET |
| EMBB5N10P | N-Channel Logic Level Enhancement Mode Field Effect Transistor |