EMBB0N10V Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMBB0N10V
- Manufacturer: Excelliance MOS
- Size: 201.56 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMBB0N10A | MOSFET |
| EMBB0N10J | MOSFET |
| EMBB0P10A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBB5B10G | MOSFET |
| EMBB5N10P | N-Channel Logic Level Enhancement Mode Field Effect Transistor |