Datasheet Details
| Part number | EMD02N06TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 509.46 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD02N06TL8-ExcellianceMOS.pdf |
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Overview: EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMD02N06TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 509.46 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD02N06TL8-ExcellianceMOS.pdf |
|
|
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: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1 TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Energy1 L = 0.1mH Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation1 TC = 25 °C TC = 100 °C Power Dissipation1 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 270 170 33 26 645 119 708 354 208.3 83.3 3.1 2 -55 to 150 ▪100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=72A, Rated VDS=60V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 0.6 Junction-to-Ambient3 RθJA 40 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 340°C / W when mounted on a 1 in2 pad of 2 oz copper.
UNIT V A mJ W W ℃ UNIT °C / W 2020/4/1 P.1 EMD02N06TL8 ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = 250uA 60 VDS = VGS, ID = 250uA 2 VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V 270 VGS = 10V, ID = 50A VGS =7V, ID = 20A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 Ciss
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