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EMD02N10TL8 Datasheet - Excelliance MOS

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 100V RDSON (TYP.)@VGS=10V RDSON (TYP.)@VGS=7V 2.2mΩ 2.8mΩ ID @TC=25℃ 304.0A ID @TA=25℃ 29.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-.

EMD02N10TL8-ExcellianceMOS.pdf