Datasheet Details
| Part number | EMD02N10TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 625.60 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD02N10TL8-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMD02N10TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 625.60 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD02N10TL8-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V RDSON (TYP.)@VGS=7V 2.2mΩ 2.8mΩ ID @TC=25℃ 304.0A ID @TA=25℃ 29.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C TC = 100 °C ID TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=53A, Rated VDS=100V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 342°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test EMD02N10TL8 LIMITS ±20 304 192 29 23 761 88 387.2 193.6 313 125 3 1.9 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.4 42 UNIT °C/W 2020/10/5 P.1 A.0 EMD02N10TL8 ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = 250uA 100 VDS = VGS, ID = 250uA 2 VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS =70V, VGS =0V, TJ = 125 °C VDS = 5V, VGS = 10V 304 VGS = 10V, ID = 50A VGS =7V, ID = 20A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resistance4,5 Total Gate Charge1,2,5 Gate-Source Char
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