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EMDB0N25F Datasheet - Excelliance MOS

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMDB0N25F General Description

BVDSS 250V RDSON (MAX.) 0.22Ω ID 18A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC .

EMDB0N25F Datasheet (356.85 KB)

Preview of EMDB0N25F PDF

Datasheet Details

Part number:

EMDB0N25F

Manufacturer:

Excelliance MOS

File Size:

356.85 KB

Description:

Single n-channel logic level enhancement mode field effect transistor.

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EMDB0N25F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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