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FKBB8008 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBB8008
Manufacturer FETek
File Size 448.02 KB
Description N-Channel MOSFET
Download FKBB8008 Download (PDF)

General Description

The FKBB8008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBB8008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

PRPAK3X3 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±12 50 32 150 125 50 31 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBB8008 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 4.