Datasheet Details
| Part number | FKD6115 |
|---|---|
| Manufacturer | FETek |
| File Size | 462.70 KB |
| Description | P-Channel MOSFET |
| Download | FKD6115 Download (PDF) |
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| Part number | FKD6115 |
|---|---|
| Manufacturer | FETek |
| File Size | 462.70 KB |
| Description | P-Channel MOSFET |
| Download | FKD6115 Download (PDF) |
|
|
|
The FKD6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKD6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -60 ±20 -35 -27 -70 113 47.6 52.1 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology FKD6115 P-Ch 60V Fast Switching.
| Part Number | Description |
|---|---|
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| FKD6004 | N-Channel MOSFET |
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| FKD6016 | N-Channel MOSFET |