FNK10N25V mosfet equivalent, n-channel power mosfet.
* VDS = 20V,ID = 5A R DS(ON) < 14mΩ @ VGS=2.5V R DS(ON) < 11mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
* Su.
The FNK10N25V uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G
D
D G
Ge.
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