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FNK10N25V - N-Channel Power MOSFET

General Description

voltages as low as 2.5V.

Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 5A R DS(ON) < 14mΩ @ VGS=2.5V R DS(ON) < 11mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package SS Schematic diagram.

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Datasheet Details

Part number FNK10N25V
Manufacturer FNK
File Size 588.16 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK10N25V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK10N25V FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N25V uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G D D G General Features ● VDS = 20V,ID = 5A R DS(ON) < 14mΩ @ VGS=2.5V R DS(ON) < 11mΩ @ VGS=4.