FNK10N01 Datasheet, Mosfet, FNK

FNK10N01 Features

• Mosfet
• VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

FNK10N01

Manufacturer:

FNK

File Size:

1.51MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

FNK10N01 Application

• Applications General Features
• VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
• High density cell design for ultra low

TAGS

FNK10N01

FNK

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