FNK10N02-A Datasheet, Mosfet, FNK

FNK10N02-A Features

• Mosfet
• VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ1.95mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current <

PDF File Details

Part number:

FNK10N02-A

Manufacturer:

FNK

File Size:

1.51MB

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📄 Datasheet

Description:

N-channel power mosfet. The FNK10N02-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

FNK10N02-A Application

• Applications General Features
• VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ1.95mΩ)
• High density cell design for ultra lo

TAGS

FNK10N02-A

FNK

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