IRFS440B mosfet equivalent, 500v n-channel mosfet.
*
*
*
*
*
* 6.2A, 500V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.
Image gallery
Download