IRFS610B Datasheet 200V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

IRFS610B 200v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRFS610B
Manufacturer	Fairchild (now onsemi)
File Size	867.00 KB
Description	200V N-Channel MOSFET
Download	IRFS610B Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Overview

IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General.

Key Features

3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

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