IRFS630B Datasheet - Fairchild

200V N-Channel MOSFET

IRFS630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRFS630B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS630B Datasheet (859.82 KB)

IRFS630B Datasheet Preview — Preview of IRFS630B PDF

Datasheet Details

Part number:

IRFS630B

Manufacturer:

Fairchild

File Size:

859.82 KB

Description:

200v n-channel mosfet.

📁 Related Datasheet

IRFS630 200V/9A POWER MOSFET (TAITRON)

IRFS630 N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)

IRFS630 N-Channel Power MOSFET (Samsung)

IRFS630A N-Channel MOSFET Transistor (Inchange Semiconductor)

IRFS630A Advanced Power MOSFET (Fairchild)

IRFS631 N-Channel Power MOSFET (Samsung)

IRFS634 250V/5.5A N-Channel Power MOSFET (TAITRON)

IRFS634 N-Channel MOSFET (LZG)

IRFS634 N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)

IRFS634A N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IRFS630B 200V N-Channel MOSFET Fairchild

Image Gallery

IRFS630B Features

IRFS630B General Description

Datasheet Details

File Size:

Description:

IRFS630B Distributor