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Fairchild Semiconductor Electronic Components Datasheet

MPSW06 Datasheet

NPN General Purpose Amplifier

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MPSW06 pdf
MPSW06
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33. See
MPSA06 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
80
80
VEBO
Emitter-Base Voltage
4.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
MPSW06
1.0
8.0
125
50
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

MPSW06 Datasheet

NPN General Purpose Amplifier

No Preview Available !

MPSW06 pdf
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICBO Collector-Cutoff Current
IC = 1.0 mA, IB = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
80 V
4.0 V
0.1 µA
0.1 µA
100
100
0.25
1.2
V
V
100 MHz
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)


Part Number MPSW06
Description NPN General Purpose Amplifier
Maker Fairchild
Total Page 2 Pages
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