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Fairchild Semiconductor Electronic Components Datasheet

NDB410A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE
NDB410A / NDB410AE / NDB410B / NDB410BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP410A NDP410AE
NDB410A NDB410AE
NDP410B NDP410BE
NDB410B NDB410BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
100
100
±20
±40
98
36 32
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
0.33
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP410.SAM


Fairchild Semiconductor Electronic Components Datasheet

NDB410A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 9 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP410AE
NDP410BE
NDB410AE
NDB410BE
50 mJ
9A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
ALL 100
V
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VDS = 100 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
VDS = VGS,
ID = 250 µA
TJ = 125°C
ALL
2 2.9
1.4 2.3
4
3.6
VGS = 10 V,
ID = 4.5 A
TJ = 125°C
NDP410A
NDP410AE
NDB410A
NDB410AE
0.2 0.25
0.38 0.5
VGS = 10 V,
ID = 4 A
TJ = 125°C
NDP410B
NDP410BE
NDB410B
NDB410BE
0.3
0.6
VGS = 10 V, VDS = 10 V
NDP410A
NDP410AE
NDB410A
NDB410AE
9
V
V
A
NDP410B
NDP410BE
NDB410B
NDB410BE
8
A
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 4.5 A
ALL 3 4.8
S
Ciss Input Capacitance
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
ALL 385 500 pF
ALL 80 100 pF
ALL 20 30 pF
NDP410.SAM


Part Number NDB410A
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Fairchild
Total Page 6 Pages
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