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NDB410AE Datasheet - Fairchild

N-Channel MOSFET

NDB410AE Features

* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in

NDB410AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB410AE Datasheet (74.01 KB)

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Datasheet Details

Part number:

NDB410AE

Manufacturer:

Fairchild

File Size:

74.01 KB

Description:

N-channel mosfet.
May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDB410AE N-Channel MOSFET Fairchild

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