NDC7002N - Dual N-Channel MOSFET

Product Overview

Fairchild

Part number	NDC7002N
Manufacturer	Fairchild
File Size	258.26 KB
Description	Dual N-Channel MOSFET
Datasheet	NDC7002N Datasheet
Additional preview pages of the NDC7002N datasheet.

These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 SOT-6 (SuperSOTTM-6) 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drain C.

📁 Similar Datasheet

Other Datasheets by Fairchild

Published: May 12, 2005 |