Datasheet Details
| Part number | NDC7002N |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 258.26 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 NDC7002N Datasheet
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General Description
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
Key Features
- 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 SOT-6 (SuperSOTTM-6) 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drain C.