N-Ch 3.8 A, 20 V, RDS(ON)=0.035 Ω @ VGS= 4.5 V RDS(ON)=0.045 Ω @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07Ω @ VGS= -4.5 V RDS(ON)=0.095 Ω @ VGS= -2.7 V. Proprietary Super.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and pro.

&P-Channel

NDH8320C

NDH832P

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH833N

NDH834P

NDH8436

NDH8447

NDH8502P

NDH8503N