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NDS8435 - Single P-Channel MOSFET

Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -7A, -30V. RDS(ON) = 0.028Ω @ VGS = -10V RDS(ON) = 0.045Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS8435.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
NDS8435A Single P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -7A, -30V. RDS(ON) = 0.028Ω @ VGS = -10V RDS(ON) = 0.045Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON).
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