25N60N Key Features
- RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
- Ultra Low Gate Charge (Typ. Qg = 57 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: 25N60N
- Manufacturer: Fairchild (official site)
- Size: 603.21 KB
Other 25N60N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
25N60N | N-Channel MOSFET |
Inchange Semiconductor |
25N60 | N-Channel MOSFET |
25N60N Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter...