2N7002
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
Description
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 m A DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
1 TO-92 1. Source 2. Gate 3. Drain
SOT-23
(TO-236AB) 2N7002/NDS7002A
Ordering Information
Part Number
2N7000 2N7000_D74Z 2N7000_D75Z 2N7000_D26Z
2N7002 NDS7002A
Marking
2N7000 2N7000 2N7000 2N7000
702 712
Package
TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L...
