2N7002 fet equivalent, n-channel fet.
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
Descriptio.
requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-volt.
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast swi.
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