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Fairchild Semiconductor Electronic Components Datasheet

2N7002 Datasheet

N-channel FET

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August 2016
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Description
These N-channel enhancement mode field effect transis-
tors are produced using Fairchild's proprietary, high cell
density, DMOS technology. These products have been
designed to minimize on-state resistance while providing
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 400 mA
DC and can deliver pulsed currents up to 2 A. These
products are particularly suited for low-voltage, low-cur-
rent applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
D
1 TO-92
1. Source 2. Gate 3. Drain
S
G
SOT-23
(TO-236AB)
2N7002/NDS7002A
G
D
S
Ordering Information
Part Number
2N7000
2N7000_D74Z
2N7000_D75Z
2N7000_D26Z
2N7002
NDS7002A
Marking
2N7000
2N7000
2N7000
2N7000
702
712
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Min Order Qty /
Immediate Pack
Qty
10000 / 1000
2000 / 2000
2000 / 2000
2000 / 2000
3000 / 3000
3000 / 3000
© 1998 Fairchild Semiconductor Corporation
2N7000 / 2N7002 / NDS7002A Rev. 2.10
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

2N7002 Datasheet

N-channel FET

No Preview Available !

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VDGR
VGSS
ID
PD
Drain-to-Source Voltage
Drain-Gate Voltage (RGS 1 M
Gate-Source Voltage - Continuous
Gate-Source Voltage - Non Repetitive (tp < 50 S)
Maximum Drain Current - Continuous
Maximum Drain Current - Pulsed
Maximum Power Dissipation Derated above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10 Seconds
Value
2N7000 2N7002
60
60
±20
±40
200 115
500 800
400 200
3.2 1.6
-55 to 150
300
NDS7002A
Unit
V
V
V
280
1500
300
2.4
-65 to 150
mA
mW
mW/°C
°C
°C
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
RJA Thermal Resistance, Junction to Ambient
2N7000
312.5
Value
2N7002
625
NDS7002A
417
Unit
°C/W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage,
Forward
IGSSR Gate - Body Leakage,
Reverse
Conditions
Type
VGS = 0 V, ID = 10 A All
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V,
TC = 125°C
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V,
TC = 125°C
VGS = 15 V, VDS = 0 V
2N7000
2N7002
NDS7002A
2N7000
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A
VGS = -15 V, VDS = 0 V 2N7000
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A
Min. Typ. Max. Unit
60 V
1 A
1 mA
1 A
0.5 mA
10 nA
100 nA
-10 nA
-100 nA
© 1998 Fairchild Semiconductor Corporation
2N7000 / 2N7002 / NDS7002A Rev. 2.10
2
www.fairchildsemi.com


Part Number 2N7002
Description N-channel FET
Maker Fairchild Semiconductor
PDF Download

2N7002 Datasheet PDF






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