* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input / Output Leakage
* Ultra-Small Surface Mount Package
* Pb Free / RoHS Compliant
* ESD HBM = 2000 V (Typical: 3000 V) as per JESD
2N7002K
Fairchild Semiconductor
241.92 KB
N-channel mosfet.
2N7002K N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Feat.
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