2N7002K Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD Protected • Low RDS(on) • Surf

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Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spec

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc

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2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-

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Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1

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N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE * Description: * Gate Pretection Diode SOURCE 2 The 2N7002K utilized

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2N7002K TrenchMOS™ logic level FET Rev. 01 — 20 October 2003 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-

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www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

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2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • L

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2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tre

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NEW PRODUCT Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID Max TA = +25°C 380mA 310mA Description and Applications This MO

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L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance

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2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tr

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDS

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage cont

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UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to prov

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MOSFET 2N7002K-HF N-Channel RoHS Device Halogen Free Features -Small Signal MOSFET. -ESD protected: 1000V. Marking: 702 Equivalent Circuit D G : Gate

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2N7002K N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

Rating: 1 ★ (4 votes)