2N7002K Datasheet | Specifications & PDF Download

2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc

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Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

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Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spec

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DATA SHEET www.onsemi.com Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD Protected • Low RDS(on) • Surf

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CRMLTL2N7002K N-Channel 60V, 1.7Ω Typ. Power MOSFET Description Features l 60V, 0.3A RDS(ON) Typ = 1.7 Ω @ VGS = 10V RDS(ON) Typ = 2.0 Ω @ VGS =

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AP2N7002K-HF-VB AP2N7002K-HF-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V I

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General Description FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power fi

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AP2N7002K-VB AP2N7002K-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE * Description: * Gate Pretection Diode SOURCE 2 The 2N7002K utilized

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www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

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2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-

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Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDS

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2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • L

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Description JMTL2N7002KS JMT N-channel MOSFET Features Application  VDS=60V, ID=0.25A  Battery Operated Systems RDS(ON) <2.2Ω @ VGS = 10V 

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Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1

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2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tre

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Main Product Characteristics: VDSS 60V RDS(on) 2.3Ω (Max) ID 0.3A SOT-23 2N7002KC Pin Assignments Schematic Diagram Features and Benefits: 

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Description JMTL2N7002K JMT N-channel MOSFET Features Application  VDS=60V, ID=0.3A  Battery Operated Systems RDS(ON) <2.8Ω @ VGS = 10V  Di

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