Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS.
2N7002K - N-channel MOSFET
Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spec.2N7002KU - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 3Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.2N7002KB - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.2N7002K - N-Channel Enhancement Mode Power MOSFET
2N7002K N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.2N7002KDW - Dual N-Channel MOSFET
Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES.2N7002KDW - Dual N-Channel MOSFET
Elektronische Bauelemente 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET FEATURES Low on-resistance Fast switching Speed Low-voltage .AGM2N7002K3 - MOSFET
AGM2N7002K3 ● General Description The AGM2N7002K3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R.2N7002KW - N-channel MOSFET
Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spe.2N7002KW - N-channel MOSFET
2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tr.2N7002K - N-channel MOSFET
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc.2N7002K - N-channel MOSFET
2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • L.2N7002K - N-channel MOSFET
2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VG.2N7002KU - N-Channel MOSFET
Main Product Characteristics VDSS 60V RDS(on) 3Ω(max.) ID 0.3A Features and Benefits SOT-23 Advanced MOSFET process technology Special desig.2N7002KDW - N-channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V .2N7002KDW - N-Channel MOSFET
2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced T.2N7002KW - N-channel MOSFET
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-.2N7002KW - N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS 9 N-Channel MOSFET RDS(on)MAX ȍ#9 .2N7002K1 - N-CHANNEL MOSFET
2N7002K1 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 N MOS 。N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 。 1KV. Sensitive gat.2N7002K - N-Channel MOSFET
Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu.2N7002K - N-Channel MOSFET
Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1.