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Fairchild Semiconductor Electronic Components Datasheet

4N38 Datasheet

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

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HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
H11D1
H11D2
H11D3
H11D4
4N38
APPLICATIONS
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
ANODE 1
CATHODE 2
N/C 3
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ TA = 25°C
Derate above 25°C
6 BASE
5 COLLECTOR
4 EMITTER
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
8/9/00 200046A


Fairchild Semiconductor Electronic Components Datasheet

4N38 Datasheet

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

No Preview Available !

HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter
DETECTOR
*Power Dissipation @ TA = 25°C
Derate linearly above 25°C
*Collector to Emitter Voltage
*Collector Base Voltage
*Emitter to Collector Voltage
Collector Current (Continuous)
H11D1 - H11D2
H11D3 - H11D4
4N38
H11D1 - H11D2
H11D3 - H11D4
4N38
H11D1 - H11D2
H11D3 - H11D4
H11D1, H11D2, H11D3, H11D4, 4N38
Symbol
PD
VCER
VCBO
VECO
Value
300
4.0
300
200
80
300
200
80
7
100
Units
mW
mW/°C
V
mA
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions Symbol Device
Min Typ**
Max
Unit
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
(IF = 10 mA)
(IR = 10 µA)
(VF = 0 V, f = 1 MHz)
(VF = 1 V, f = 1 MHz)
(VR = 6 V)
(RBE = 1 M")
(IC = 1.0 mA, IF = 0)
(No RBE) (IC = 1.0 mA)
VF
!VF
!TA
BVR
CJ
IR
BVCER
BVCEO
*Collector to Base
(IC = 100 µA, IF = 0) BVCBO
Emitter to Base
Emitter to Collector
*Leakage Current
Collector to Emitter
(RBE = 1 M")
(IE = 100 µA , IF = 0)
(VCE = 200 V, IF = 0, TA = 25°C)
(VCE = 200 V, IF = 0, TA = 100°C)
(VCE = 100 V, IF = 0, TA = 25°C)
(VCE = 100 V, IF = 0, TA = 100°C)
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)
BVEBO
BVECO
ICER
ICEO
ALL
ALL
ALL
ALL
ALL
ALL
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
H11D1/2
H11D3/4
4N38
6
300
200
80
300
200
80
7
7
1.15
-1.8
25
50
65
0.05
10
1.5 V
mV/°C
V
pF
pF
10 µA
V
100 nA
250 µA
100 nA
250 µA
50 nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
8/9/00 200046A


Part Number 4N38
Description HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
Maker Fairchild Semiconductor
Total Page 7 Pages
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