MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.
Higher Sensitivity to Low Input Drive Current Meets or Exceeds All JEDEC Regist
