4N30 Datasheet - Motorola Inc

4N30 6-Pin DIP Optoisolators

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. Higher Sensitivity to Low Input Drive Current Meets or Exceeds All JEDEC Regist.

4N30 Features

* ther notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and

4N30_MotorolaInc.pdf