6N80C Datasheet - Fairchild Semiconductor

800V N-Channel MOSFET

6N80C Features

* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A

* Low Gate Charge (Typ. 21 nC)

* Low Crss (Typ. 8 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai

6N80C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

6N80C Datasheet (1.03 MB)

6N80C Datasheet Preview — Preview of 6N80C PDF

Datasheet Details

Part number:

6N80C

Manufacturer:

Fairchild Semiconductor

File Size:

1.03 MB

Description:

800v n-channel mosfet.

📁 Related Datasheet

6N80 N-Channel Power MOSFET (nELL)

6N80 N-Channel MOSFET Transistor (Inchange Semiconductor)

6N80 N-CHANNEL POWER MOSFET (UTC)

6N80A N-Channel MOSFET (INCHANGE)

6N80K5 N-channel Power MOSFET (STMicroelectronics)

6N8 Double Diode Vari-Mu Pentode (VALVES)

6N-60 7 x 5 mm SMD Seam Cxo Tyoe / 6N Series (TXC)

6N04N009 Power-Transistor (Infineon)

6N06T PHT6N06T (NXP)

6N10 N-Channel MOSFET (Unisonic Technologies)

TAGS

6N80C 800V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

6N80C Features

6N80C General Description

Datasheet Details

File Size:

Description:

6N80C Distributor