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* 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Im.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

6N90

6N90-FC

6N90K5

6N90Z

6N-60

6N04N009

6N06T

6N10

6N100-FC

6N1135

6N1136

6N134

6N135