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Fairchild Semiconductor Electronic Components Datasheet

BD441 Datasheet

NPN Epitaxial Silicon Transistor

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BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
NPN Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCES
Parameter
Collector-Base Voltage
: BD439
: BD441
Collector-Emitter Voltage
: BD439
: BD441
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: BD439
: BD441
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
Parameter
* Collector-Emitter Sustaining Voltage
: BD439
: BD441
Collector Cut-off Current : BD439
: BD441
Collector Cut-off Current
: BD439
: BD441
Emitter Cut-off Current
* DC Current Gain
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Test Condition
IC = 100mA, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10mA
VCE =1V, IC = 500mA
VCE = 1V, IC = 2A
IC = 2A, IB = 0.2A
VCE = 5V, IC = 10mA
VCE = 1V, IC = 2A
VCE = 1V, IC = 250mA
Value
60
80
60
80
60
80
5
4
7
1
36
150
- 65 ~ 150
Min. Typ.
60
80
20 130
15 130
40 140
40 140
25
15
0.58
3
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
100 µA
100 µA
100 µA
100 µA
1 mA
0.8 V
V
1.5 V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001


Fairchild Semiconductor Electronic Components Datasheet

BD441 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
1000
100
VCE = 1V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
5.0
VCE = 1V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
10
IC MAX. (Pulsed)
10ms 1ms
IC Max. (Continuous)
DC
100µs
1
1µs
10µs
0.1
1
BD439
BD441
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1
IC = 10 IB
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 2. Collector-Emitter Saturation Voltage
1000
100
10
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 4. Collector-Base Capacitance
48
42
36
30
24
18
12
6
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001


Part Number BD441
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
Total Page 4 Pages
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