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Fairchild Semiconductor Electronic Components Datasheet

BSR13 Datasheet

NPN General Purpose Amplifier

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BSR13
NPN General Purpose Amplifier
• Sourced from process 10.
C
E
B SOT-23
Mark: U7
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
60
5.0
0.5
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applicatiwownws.DinavtaoSlvhienegt4pUu.clsoemd or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VCB = 50V, IE = 0, Ta = 150°C
VEB = 3.0V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage *
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 1.0V *
IC = 500mA, VCE = 10V *
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
fT Curent Gain Bandwidth Product
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
IC = 20mA, VCE = 20V, f = 100MHz
Min.
30
60
5.0
35
50
75
100
50
30
250
Units
V
V
V
A
°C
Max. Units
V
V
V
30 nA
10 µA
15 nA
300
0.4 V
1.6
1.3 V
2.6
©2004 Fairchild Semiconductor Corporation
Rev. A, September 2004


Fairchild Semiconductor Electronic Components Datasheet

BSR13 Datasheet

NPN General Purpose Amplifier

No Preview Available !

Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, September 2004


Part Number BSR13
Description NPN General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 4 Pages
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