BSS84 mosfet equivalent, p-channel mosfet.
* -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
* Voltage-Controlled P-Channel Small-Signal
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* High-Density Cell Design for Low RDS(ON)
* High S.
requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage appli.
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fas.
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