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FCA47N60_F109 - N-Channel MOSFET

Download the FCA47N60_F109 datasheet PDF. This datasheet also covers the FCA47N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 58 mΩ.
  • Ultra Low Gate Charge (Typ. Qg= 210 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCA47N60_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCA47N60F 600V N-Channel MOSFET
FCA47N60 N-Channel MOSFET
FCA16N60 600V N-Channel MOSFET
FCA16N60N N-Channel MOSFET
FCA20N60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ September 2017 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.