FCA47N60F Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 62 mW
- Fast Recovery Time (Typ. Trr = 240 ns)
- Ultra Low Gate Charge (Typ. Qg = 210 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FCA47N60F | 600V N-Channel MOSFET | |
onsemi |
FCA47N60 | N-Channel MOSFET |
| FCA47N60 | N-Channel MOSFET | |
onsemi |
FCA47N60-F109 | N-Channel MOSFET |
| FCA47N60_F109 | N-Channel MOSFET |