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FCD5N60 - 600V N-Channel MOSFET

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 810 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 16 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 32 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription

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FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET August 2014 FCD5N60 / FCU5N60 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 950 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 810 mΩ • Ultra Low Gate Charge (Typ. Qg = 16 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 32 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED TV and Monitor • Lighting • Solar Inverter • AC-DC Power Supply D Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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