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FCD380N60E - N-Channel MOSFET

General Description

® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, pr

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 97 pF).
  • 100% Avalanche Tested.

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FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) • 100% Avalanche Tested Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.