Datasheet Summary
FCD4N60 600V N-Channel MOSFET
600V N-Channel MOSFET
Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 1.0Ω
- Ultra low gate charge (typ. Qg = 12.8nC)
- Low effective output capacitance (typ. Coss.eff = 32pF)
- 100% avalanche tested
SuperFET
Description
October 2006
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very...