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FCD620N60ZF - N-Channel MOSFET

Download the FCD620N60ZF datasheet PDF. This datasheet also covers the FCD600N60ZF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150oC.
  • Typ. RDS(on) = 528 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective output Capacitance (Typ. Coss(eff. ) = 71 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCD600N60ZF-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCD620N60ZF — N-Channel SuperFET® II FRFET® MOSFET FCD620N60ZF N-Channel SuperFET® II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ December 2014 Features • 650 V @ TJ = 150oC • Typ. RDS(on) = 528 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Invertor / AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.