FCH104N60F mosfet equivalent, mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 98 mΩ
* Ultra Low Gate Charge (Typ. Qg = 107 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF)
*.
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’.
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