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FCH165N60E - N-Channel SuperFET II Easy-Drive MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 650 V @TJ = 150°C.
  • Typ. RDS(on) = 132 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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FCH165N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH165N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 23 A, 165 mΩ December 2015 Features • 650 V @TJ = 150°C • Typ. RDS(on) = 132 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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