FCH104N60 - N-Channel MOSFET

INCHANGE

Datasheet Details

With TO-247 packaging.
Drain Source Voltage- : VDSS ≥ 600V.
Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 FCH104N60 Similar Datasheet

FCH104N60F - MOSFET (Fairchild Semiconductor)
FCH104N60F-F085 - N-Channel MOSFET (ON Semiconductor)
FCH10A03L - Schottky Barrier Diode (Kyocera)
FCH10A04 - Schottky Barrier Diode (Nihon Inter Electronics)
FCH10A045 - Dual Common Cathode Schottky Barrier Rectifier (Thinki Semiconductor)
FCH10A06 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)
FCH10A09 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)
FCH10A10 - Schottky Barrier Diode (Kyocera)

Other Datasheets by INCHANGE

Published: Oct 24, 2020 |