FCP110N65F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 96 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 98 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FCP110N65F
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 674.01 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FCP11N60 | SuperFET MOSFET |
| FCP11N60F | 600V N-Channel MOSFET |
| FCP11N60N | N-Channel MOSFET |
| FCP104N60 | MOSFET |
| FCP104N60F | N-Channel MOSFET |