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FCP11N60N Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.

SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

Overview

FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.

Key Features

  • RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A.
  • Ultra Low Gate Charge (Typ. Qg = 27.4 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.