FCPF190N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 170 mΩ
- Ultra Low Gate Charge (Typ. Qg = 57 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FCPF190N60
- Manufacturer: Fairchild (official site)
- Size: 721.88 KB
Other FCPF190N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FCPF190N60 | N-Channel MOSFET |
Inchange Semiconductor |
FCPF190N60 | N-Channel MOSFET |
|
onsemi |
FCPF190N60-F152 | N-Channel MOSFET |
|
onsemi |
FCPF190N60-F154 | N-Channel MOSFET |
|
onsemi |
FCPF190N60E | N-Channel MOSFET |
FCPF190N60 Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the...