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FCPF190N60E - N-Channel MOSFET

Download the FCPF190N60E datasheet PDF. This datasheet also covers the FCPF190N60E-F154 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 160 mW.
  • Ultra Low Gate Charge (Typ. Qg = 63 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 178 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCPF190N60E-F154-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF190N60E MOSFET Fairchild Semiconductor
FCPF190N60E N-Channel MOSFET INCHANGE
FCPF190N60 N-Channel MOSFET Fairchild Semiconductor
FCPF190N60 N-Channel MOSFET INCHANGE
FCPF190N65FL1 N-Channel MOSFET INCHANGE

Other Datasheets by onsemi

Part Number Description
FCPF190N60E-F154 N-Channel MOSFET
FCPF190N60 N-Channel MOSFET
FCPF190N60-F152 N-Channel MOSFET
FCPF190N60-F154 N-Channel MOSFET
FCPF190N65F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, SUPERFET) II 600 V, 20.6 A, 190 mW FCPF190N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss.