FCPF190N60E Overview
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 160 mΩ
- Ultra Low Gate Charge (Typ. Qg = 63 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- RoHS Compliant
