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FCPF190N60E - MOSFET

Download the FCPF190N60E datasheet PDF. This datasheet also covers the FCP190N60E variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 160 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 63 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 178 pF).
  • 100% Avalanche Tested.
  • An Integrated Gate Resistor.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP190N60E-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ December 2014 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.