Datasheet Summary
FCP190N60 / FCPF190N60
- N-Channel SuperFET® II MOSFET
FCP190N60 / FCPF190N60
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
December 2014
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 170 mΩ
- Ultra Low Gate Charge (Typ. Qg = 57 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
- 100% Avalanche Tested
- RoHS pliant
Applications
- LCD / LED / PDP TV Lighting
- Solar Inverter
- AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize...
