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FCPF190N60 - N-Channel MOSFET

Download the FCPF190N60 datasheet PDF. This datasheet also covers the FCP190N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 170 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 160 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP190N60-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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FCPF190N60 N-Channel MOSFET ON Semiconductor
FCPF190N60 N-Channel MOSFET INCHANGE
FCPF190N60-F152 N-Channel MOSFET ON Semiconductor
FCPF190N60-F154 N-Channel MOSFET ON Semiconductor
FCPF190N60E N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCPF190N60E MOSFET
FCPF190N65FL1 N-Channel MOSFET
FCPF11N60 SuperFET MOSFET
FCPF11N60F 600V N-Channel MOSFET
FCPF11N60NT N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ December 2014 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.